Emerging nanoelectronic devices / (Record no. 21584)

MARC details
000 -LEADER
fixed length control field 06489cam a2200865 i 4500
001 - CONTROL NUMBER
control field ocn884962060
003 - CONTROL NUMBER IDENTIFIER
control field OCoLC
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20230823095425.0
006 - FIXED-LENGTH DATA ELEMENTS--ADDITIONAL MATERIAL CHARACTERISTICS--GENERAL INFORMATION
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007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
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008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 140729s2014 enk ob 001 0 eng
010 ## - LIBRARY OF CONGRESS CONTROL NUMBER
LC control number 2014030064
040 ## - CATALOGING SOURCE
Original cataloging agency DLC
Language of cataloging eng
Description conventions rda
-- pn
Transcribing agency DLC
Modifying agency N$T
-- IDEBK
-- DG1
-- YDXCP
-- OCLCF
-- CDX
-- COO
-- UNBCA
-- EBLCP
-- RECBK
-- DEBSZ
-- OCLCQ
-- VT2
-- DEBBG
019 ## -
-- 896800073
-- 900726008
-- 908280453
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 9781118958278
Qualifying information (ePub)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 1118958276
Qualifying information (ePub)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 9781118958261
Qualifying information (Adobe PDF)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 1118958268
Qualifying information (Adobe PDF)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 9781118958254
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 111895825X
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 1118447743
Qualifying information (cloth)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 9781118447741
Qualifying information (cloth)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 9781322317595
Qualifying information (MyiLibrary)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
ISBN 1322317593
Qualifying information (MyiLibrary)
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
Cancelled/invalid ISBN 9781118447741
Qualifying information (cloth)
028 01 - PUBLISHER NUMBER
Publisher number EB00590480
Source Recorded Books
029 1# - (OCLC)
OCLC library identifier AU@
System control number 000053637244
029 1# - (OCLC)
OCLC library identifier CHBIS
System control number 010442237
029 1# - (OCLC)
OCLC library identifier CHVBK
System control number 334087147
029 1# - (OCLC)
OCLC library identifier DEBSZ
System control number 431832765
029 1# - (OCLC)
OCLC library identifier NZ1
System control number 15913239
029 1# - (OCLC)
OCLC library identifier GBVCP
System control number 815088248
029 1# - (OCLC)
OCLC library identifier DEBSZ
System control number 456575456
029 1# - (OCLC)
OCLC library identifier DEBBG
System control number BV043397001
035 ## - SYSTEM CONTROL NUMBER
System control number (OCoLC)884962060
Canceled/invalid control number (OCoLC)896800073
-- (OCoLC)900726008
-- (OCoLC)908280453
042 ## - AUTHENTICATION CODE
Authentication code pcc
050 00 - LIBRARY OF CONGRESS CALL NUMBER
Classification number TK7874.84
072 #7 - SUBJECT CATEGORY CODE
Subject category code TEC
Subject category code subdivision 009070
Source bisacsh
082 00 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 621.381
Edition number 23
049 ## - LOCAL HOLDINGS (OCLC)
Holding library MAIN
245 00 - TITLE STATEMENT
Title Emerging nanoelectronic devices /
Statement of responsibility, etc edited by Dr An Chen, Dr James Hutchby, Dr Victor Zhirnov, Dr George Bourianoff.
264 #1 -
-- Chichester, West Sussex, United Kingdom :
-- Wiley,
-- 2014.
300 ## - PHYSICAL DESCRIPTION
Extent 1 online resource.
336 ## -
-- text
-- txt
-- rdacontent
337 ## -
-- computer
-- n
-- rdamedia
338 ## -
-- online resource
-- nc
-- rdacarrier
504 ## - BIBLIOGRAPHY, ETC. NOTE
Bibliography, etc Includes bibliographical references and index.
588 0# -
-- Print version record and CIP data provided by publisher.
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note Emerging Nanoelectronic Devices; Contents; Preface; List of Contributors; Acronyms; Part One: Introduction; 1. The Nanoelectronics Roadmap; 1.1 Introduction; 1.2 Technology Scaling: Impact and Issues; 1.3 Technology Scaling: Scaling Limits of Charge-based Devices; 1.4 The International Technology Roadmap for Semiconductors; 1.5 ITRS Emerging Research Devices International Technology Working Group; 1.5.1 ERD Editorial Team; 1.5.2 Vision and Mission; 1.5.3 Scope; 1.6 Guiding Performance Criteria; 1.6.1 Nanoinformation Processing; 1.6.2 Nanoelectronic Device Taxonomy.
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note 1.6.3 Fundamental Guiding Principles -- ``Beyond CMOS ́ ́ Information Processing1.6.4 Current Technology Requirements for CMOS Extension and Beyond CMOS Memory and Logic Technologies; 1.7 Selection of Nanodevices as Technology Entries; 1.8 Perspectives; References; 2. What Constitutes a Nanoswitch? A Perspective; 2.1 The Search for a Better Switch; 2.2 Complementary Metal Oxide Semiconductor Switch: Why it Shows Gain; 2.3 Switch Based on Magnetic Tunnel Junctions: Would it Show Gain?; 2.3.1 Operation of an MTJ; 2.3.2 W-R Unit with Electrical Isolation; 2.3.3 Does This W-R Unit Have Gain?
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note 2.4 Giant Spin Hall Effect: A Route to Gain2.4.1 Concatenability; 2.4.2 Proof of Gain and Directionality; 2.5 Other Possibilities for Switches with Gain; 2.5.1 All-spin Logic; 2.6 What do Alternative Switches Have to Offer?; 2.6.1 Energy-Delay Product; 2.6.2 Beyond Boolean Logic; 2.7 Perspective; 2.8 Summary; Acknowledgments; References; Part Two: Nanoelectronic Memories; 3. Memory Technologies: Status and Perspectives; 3.1 Introduction: Baseline Memory Technologies; 3.2 Essential Physics of Charge-based Memory; 3.3 Dynamic Random Access Memory.
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note 3.3.1 Total Energy Required to Create/Maintain the Content of a Memory Cell3.3.2 DRAM Access Time (WRITE or READ); 3.3.3 Energy-Space-Time Compromise for DRAM; 3.4 Flash Memory; 3.4.1 Store; 3.4.2 Write; 3.4.3 Read; 3.4.4 Energetics of Flash Memory; 3.5 Static Random Access Memory; 3.5.1 SRAM Access Time; 3.5.2 SRAM Scaling; 3.6 Summary and Perspective; Appendix: Memory Array Interconnects; Acknowledgments; References; 4. Spin Transfer Torque Random Access Memory; 4.1 Chapter Overview; 4.2 Spin Transfer Torque; 4.2.1 Background of Spin Transfer Torque.
505 8# - FORMATTED CONTENTS NOTE
Formatted contents note 4.2.2 Experimental Observation of Spin Transfer Torque4.3 STT-RAM Operation; 4.3.1 Design of STT-RAM Cells; 4.3.2 Key Parameters for Operation; 4.4 STT-RAM with Perpendicular Anisotropy; 4.5 Stack and Material Engineering for Jc Reduction; 4.5.1 Dual Pinned Structure; 4.5.2 Nanocurrent Channel Structure Design; 4.5.3 Electric Field Assisted Switching; 4.6 Ultra-Fast Switching of MTJs; 4.7 Spin-Orbit Torques for Memory Application; 4.8 Current Demonstrations for STT-RAM; 4.9 Summary and Perspectives; References; 5. Phase Change Memory; 5.1 Introduction; 5.2 Device Operation.
520 ## - SUMMARY, ETC.
Summary, etc Emerging Nanoelectronic Devices focuses on the future direction of semiconductor and emerging nanoscale device technology. As the dimensional scaling of CMOS approaches its limits, alternate information processing devices and microarchitectures are being explored to sustain increasing functionality at decreasing cost into the indefinite future. This is driving new paradigms of information processing enabled by innovative new devices, circuits, and architectures, necessary to support an increasingly interconnected world through a rapidly evolving internet. This original title provides a fresh.
526 ## - STUDY PROGRAM INFORMATION NOTE
Department Physical Science
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Nanoelectronics.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Nanoelectromechanical systems.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Nanostructured materials.
650 #4 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Nanoelectromechanical systems.
650 #4 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Nanoelectronics.
650 #4 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Nanostructured materials.
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element TECHNOLOGY & ENGINEERING
General subdivision Mechanical.
Source of heading or term bisacsh
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Nanoelectromechanical systems.
Source of heading or term fast
-- (OCoLC)fst01741807
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Nanoelectronics.
Source of heading or term fast
-- (OCoLC)fst01741867
650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Nanostructured materials.
Source of heading or term fast
-- (OCoLC)fst01032630
655 #4 - INDEX TERM--GENRE/FORM
Genre/form data or focus term Electronic books.
655 #0 - INDEX TERM--GENRE/FORM
Genre/form data or focus term Electronic books.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Chen, An
Titles and other words associated with a name (Electronics engineer),
Relator term editor.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Hutchby, James,
Relator term editor.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Zhirnov, Victor V.,
Relator term editor.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Bourianoff, George,
Relator term editor.
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Display text Print version:
Title Emerging nanoelectronic devices.
Place, publisher, and date of publication Chichester, West Sussex, United Kingdom : John Wiley & Sons, 2014
International Standard Book Number 9781118447741
Record control number (DLC) 2014029299
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier <a href="http://dx.doi.org/10.1002/9781118958254">http://dx.doi.org/10.1002/9781118958254</a>
Public note Wiley Online Library
994 ## -
-- 92
-- DG1

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